| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2N6106 2N6291 |
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corporation
|
| 2SA814 2SA815 |
SILICON PNP EPITAXIAL BASE MESA TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| BD944 |
(BD944 - BD948) Silicon Epitaxial Base Power Transistors
|
Magna
|
| 2N6246 2N6248 2N6247 2N6469 |
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| BDS12IG BDS10IG BDS11IG |
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??))
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包（npn型外延型硅晶体管TO257金属封装））
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
TT electronics Semelab Limited
|
| 2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V.
|
General Electric Solid State
|
| 2SA814 |
(2SA814 / 2SA815) SILICON PNP EPITAXIAL BASE MESA TYPE
|
Toshiba Semiconductor
|
| BDS10SMD BDS10SMD05 BDS12 BDS12SMD BDS11SMD05 BDS1 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES
|
Seme LAB
|
| BDS19SMD BDS18SMD BDS19 BDS18 |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
SemeLAB
SEME-LAB[Seme LAB]
|
| TIP147T TIP145T TIP146T TIP147TTU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
